Invention Grant
- Patent Title: Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer
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Application No.: US18516703Application Date: 2023-11-21
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Publication No.: US12255091B2Publication Date: 2025-03-18
- Inventor: Tsai-Hao Hung , Ping-Cheng Ko , Tzu-Yang Lin , Fang-Yu Liu , Cheng-Han Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/66 ; H01L21/67 ; H01L21/677 ; H05F1/00

Abstract:
Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
Public/Granted literature
- US20240087945A1 SEMICONDUCTOR PROCESSING APPARATUS AND METHOD UTILIZING ELECTROSTATIC DISCHARGE (ESD) PREVENTION LAYER Public/Granted day:2024-03-14
Information query
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