Invention Grant
- Patent Title: Power conversion device, semiconductor switch drive device, and control method
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Application No.: US17996532Application Date: 2020-05-12
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Publication No.: US12289045B2Publication Date: 2025-04-29
- Inventor: Fumio Watanabe , Tetsuya Okamoto
- Applicant: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Applicant Address: JP Chuo-ku
- Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee Address: JP Chuo-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/JP2020/018943 WO 20200512
- International Announcement: WO2021/229676 WO 20211118
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M7/539 ; H03K17/0812 ; H02P27/06

Abstract:
A semiconductor switch drive device (3) includes a drive unit (10), a power supply unit (20), a switch (39), and a control unit (50). The drive unit (10) supplies a control signal to a semiconductor switch (Q) of a main circuit (2) and drives the semiconductor switch (Q). The power supply unit (20) supplies electric power to the drive unit (10). The switch (39) cuts off supply of electric power to the power supply unit (20) by detecting or controlling an overvoltage state on a primary side of the power supply unit (20). The control unit (50) switches a conductive state of the switch (39) on the basis of a voltage of a control terminal of the semiconductor switch (Q).
Public/Granted literature
- US20230208275A1 POWER CONVERSION DEVICE, SEMICONDUCTOR SWITCH DRIVE DEVICE, AND CONTROL METHOD Public/Granted day:2023-06-29
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