Invention Grant
- Patent Title: Electron source, manufacturing method therefor, and device comprising electron source
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Application No.: US18294251Application Date: 2022-06-23
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Publication No.: US12293893B2Publication Date: 2025-05-06
- Inventor: Hiromitsu Chatani , Daisuke Ishikawa , Jie Tang , Tadakatsu Ohkubo , Shuai Tang , Jun Uzuhashi , Kazuhiro Hono
- Applicant: Denka Company Limited , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Tokyo; JP Tsukuba
- Assignee: Denka Company Limited,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: Denka Company Limited,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Tokyo; JP Tsukuba
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2021-129281 20210805
- International Application: PCT/JP2022/025183 WO 20220623
- International Announcement: WO2023/013282 WO 20230209
- Main IPC: H01J1/02
- IPC: H01J1/02 ; H01J9/02 ; H01J37/06

Abstract:
A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.
Public/Granted literature
- US20240347306A1 ELECTRON SOURCE, MANUFACTURING METHOD THEREFOR, AND DEVICE COMPRISING ELECTRON SOURCE Public/Granted day:2024-10-17
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