Invention Grant
- Patent Title: Integrated circuit device and manufacturing method of the same
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Application No.: US17554183Application Date: 2021-12-17
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Publication No.: US12315560B2Publication Date: 2025-05-27
- Inventor: Huai-Ying Huang , Yu-Ming Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G11C11/412 ; G11C19/18 ; H10B10/00

Abstract:
A device is disclosed, including a latch circuit, a first pass-gate transistor, and a second pass-gate transistor. The latch circuit stores a bit data and is arranged in a first layer. The first pass-gate transistor and the second pass-gate transistor are arranged in a second layer separated from the first layer. The first pass-gate transistor is coupled between a first bit line and a first terminal of the latch circuit, and the second pass-gate transistor is coupled between a second bit line and a second terminal of the latch circuit.
Public/Granted literature
- US20230197145A1 INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2023-06-22
Information query
IPC分类: