Invention Publication
- Patent Title: INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF THE SAME
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Application No.: US17554183Application Date: 2021-12-17
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Publication No.: US20230197145A1Publication Date: 2023-06-22
- Inventor: Huai-Ying HUANG , Yu-Ming LIN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: G11C11/413
- IPC: G11C11/413

Abstract:
A device is disclosed, including a latch circuit, a first pass-gate transistor, and a second pass-gate transistor. The latch circuit stores a bit data and is arranged in a first layer. The first pass-gate transistor and the second pass-gate transistor are arranged in a second layer separated from the first layer. The first pass-gate transistor is coupled between a first bit line and a first terminal of the latch circuit, and the second pass-gate transistor is coupled between a second bit line and a second terminal of the latch circuit.
Public/Granted literature
- US12315560B2 Integrated circuit device and manufacturing method of the same Public/Granted day:2025-05-27
Information query
IPC分类: