Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18148639Application Date: 2022-12-30
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Publication No.: US12316245B2Publication Date: 2025-05-27
- Inventor: Katsumi Satoh
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker Brackett PLLC
- Priority: JP2022-042382 20220317
- Main IPC: H02M7/53
- IPC: H02M7/53 ; H02M1/00 ; H02M1/08 ; H02M7/537

Abstract:
The semiconductor device includes: a transistor, and a body diode included in the transistor so that the body diode is anti-parallel to the transistor, and a diode anti-parallel connected to the bidirectional current-conduction device, wherein the bidirectional current-conduction device allows a first current and a second current to flow, and allows at least the second current to switch between conduction and non-conduction, the first current flowing in a first direction from a first main electrode of the transistor to a second main electrode facing the first main electrode, the second current flowing through the body diode in a second direction opposite to the first direction, and the diode is smaller in area than the bidirectional current-conduction device in a plan view.
Public/Granted literature
- US20230299691A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-09-21
Information query
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