Embodiments described herein generally relate to electronic devices and electronic device manufacturing. More particularly, some embodiments of the present disclosure provide methods of manufacturing memory devices, for example, dynamic random-access memory cells with buried word-lines. In an embodiment, a method of manufacturing an electronic device is provided. The method includes recessing a metal layer to a first predetermined depth to form a recessed metal layer. The metal layer at least partially fills each feature of a plurality of features formed on a substrate and each feature has a feature depth. The method further includes exposing the recessed metal layer to a carbon-containing plasma to form a metal-carbide layer on the recessed metal layer. The method further includes recessing the recessed metal layer to a second predetermined depth by etching the metal-carbide layer and the recessed metal layer.