Invention Application
- Patent Title: Vacuum-cavity MEMS resonator
- Patent Title (中): 真空腔MEMS谐振器
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Application No.: US09949368Application Date: 2001-09-07
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Publication No.: US20030048520A1Publication Date: 2003-03-13
- Inventor: Qing Ma , Peng Cheng , Valluri Rao
- Applicant: Intel Corporation
- Applicant Address: null
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: null
- Main IPC: G02B026/00
- IPC: G02B026/00 ; H03H009/00
Abstract:
A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.
Public/Granted literature
- US06808954B2 Vacuum-cavity MEMS resonator Public/Granted day:2004-10-26
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