公开(公告)号：US20040094830A1

公开(公告)日：2004-05-20

申请号：US10612744

申请日：2003-06-30

Applicant: Intel Corporation

Inventor： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Xiao-Chun Mu

IPC: H01L023/02

CPC classification number: H01L24/19 ,  H01L21/568 ,  H01L23/532 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19041 ,  Y10T29/4935 ,  H01L2224/96 ,  H01L2224/82 ,  H01L2924/00

Abstract: A microelectronic package including a microelectronic die disposed within an opening in a microelectronic packaging core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic die. Build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die, the encapsulant material, and the microelectronic package core to form the microelectronic package.

公开(公告)号：US20040056560A1

公开(公告)日：2004-03-25

申请号：US10254402

申请日：2002-09-25

Applicant: Intel Corporation

Inventor： Li-Peng Wang ,  Qing Ma ,  Israel Yankovich

IPC: H01L041/08

CPC classification number: H03H3/02 ,  H03H9/02133 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator formed on a substrate includes a layer of piezoelectric material having a first major surface, and a second major surface sandwiched between a first conductive and a second conductive layer. The substrate on which the film bulk acoustic resonator is formed has an opening therein which exposes the first conductive layer of the film bulk acoustic resonator. The opening is substantially in the shape of a parallelogram having a first pair of parallel sides and a second pair of parallel sides. One of the first pair of parallel sides makes an angle at other than 90 degrees with one of the second pair of parallel sides.

Abstract translation: 形成在基板上的薄膜体声波谐振器包括具有第一主表面的压电材料层和夹在第一导电层和第二导电层之间的第二主表面。 其上形成有膜体声波谐振器的基板在其中具有暴露薄膜体声波谐振器的第一导电层的开口。 开口基本上具有平行四边形的形状，该平行四边形具有第一对平行边和第二对平行边。 第一对平行边之一与第二对平行边之一形成不同于90度的角度。

公开(公告)号：US20030112095A1

公开(公告)日：2003-06-19

申请号：US10023594

申请日：2001-12-17

Applicant: Intel Corporation

Inventor： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

IPC: H01L041/18

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion. A method for forming the device includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.

Abstract translation: 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。 一种形成该器件的方法包括将第一电极的第一部分和压电层沉积到该衬底上。 该方法包括：在压电层下方和第一电极的部分之下去除衬底的一部分，并将第一电极的第二部分沉积到压电膜层上并且沉积到第一电极的第一部分上。

公开(公告)号：US20040216989A1

公开(公告)日：2004-11-04

申请号：US10857101

申请日：2004-05-28

Applicant: Intel Corporation

Inventor： Qing Ma

IPC: G02B006/26 ,  H01P001/10

CPC classification number: H01H59/0009 ,  H01H2059/0036

Abstract: A microelectromechanical system (MEMS) switch has a beam with a high-resonance frequency. The MEMS switch includes a substrate having an electrical contact and a hexsil beam coupled to the substrate in order to transfer electric signals between the beam and the contact when an actuating voltage is applied to the switch. A method of fabricating a MEMS switch includes forming a substrate having a contact and forming a beam. The method further includes attaching the beam to the substrate such that the beam is maneuverable into and out of contact with the substrate.

Abstract translation: 微机电系统（MEMS）开关具有高谐振频率的光束。 MEMS开关包括具有电触点和耦合到衬底的六极管的衬底，以便当致动电压施加到开关时，在光束和触点之间传递电信号。 制造MEMS开关的方法包括形成具有接触并形成束的衬底。 该方法还包括将光束附接到基板，使得光束可操纵地进入和离开与基板的接触。

公开(公告)号：US20040012464A1

公开(公告)日：2004-01-22

申请号：US10198503

申请日：2002-07-17

Applicant: Intel Corporation

Inventor： Qing Ma ,  Dong S. Shim

IPC: H03H009/00

CPC classification number: H03H9/0542 ,  H03H9/02779 ,  H03H9/6403

Abstract: Microelectromechanical system (MEMS) apparatus and methods for surface acoustic wave (SAW) switching are disclosed. The apparatus includes a piezoelectric substrate having spaced apart input and output SAW transducers. A MEMS switch is arranged between the input and output SAW transducers The MEMS switch has a deformable member in electromagnetic communication with one or more actuation electrodes formed on or above the substrate. The deformable member is deformable to mechanically contact the substrate to deflect or absorb a SAW generated by the input SAW transducer.

Abstract translation: 公开了用于表面声波（SAW）切换的微机电系统（MEMS）装置和方法。 该装置包括具有间隔开的输入和输出SAW换能器的压电基片。 MEMS开关布置在输入和输出SAW换能器之间MEMS开关具有与形成在基板上或上方的一个或多个致动电极电磁连通的可变形构件。 可变形构件可变形以机械地接触衬底以偏转或吸收由输入SAW换能器产生的SAW。

公开(公告)号：US20030048520A1

公开(公告)日：2003-03-13

申请号：US09949368

申请日：2001-09-07

Applicant: Intel Corporation

Inventor： Qing Ma ,  Peng Cheng ,  Valluri Rao

IPC: G02B026/00 ,  H03H009/00

CPC classification number: B81B7/0077 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02503 ,  H03H2009/02511

Abstract: A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.

Abstract translation: 具有真空腔的微机电（MEMS）谐振器是使用多晶硅启用释放方法制造的。 围绕MEMS光束的真空腔通过去除围绕光束的释放材料并通过在结构上沉积氮化层而在真空下密封所得空腔来形成。 真空腔MEMS谐振器具有悬臂梁，桥梁或呼吸杆梁。

公开(公告)号：US20040155352A1

公开(公告)日：2004-08-12

申请号：US10774923

申请日：2004-02-09

Applicant: Intel Corporation

Inventor： Qing Ma

IPC: H01L021/4763 ,  H01L029/40

CPC classification number: H01L24/97 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/5389 ,  H01L23/564 ,  H01L24/19 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A packaging technology that fabricates a microelectronic package including build-up layers, having conductive traces, on an encapsulated microelectronic die and on other packaging material that surrounds the microelectronic die, wherein an moisture barrier structure is simultaneously formed with the conductive traces. An exemplary microelectronic package includes a microelectronic die having an active surface and at least one side. Packaging material(s) is disposed adjacent the microelectronic die side(s), wherein the packaging material includes at least one surface substantially planar to the microelectronic die active surface. A first dielectric material layer may be disposed on at least a portion of the microelectronic die active surface and the encapsulation material surface. At least one conductive trace is then formed on the first dielectric material layer to electrically contact the microelectronic die active surface. A barrier structure proximate an edge of the microelectronic package is formed simultaneously out of the same material as the conductive traces.

公开(公告)号：US20040155325A1

公开(公告)日：2004-08-12

申请号：US10774952

申请日：2004-02-09

Applicant: Intel Corporation

Inventor： Qing Ma ,  Harry H. Fujimoto ,  Steven Towle ,  John E. Evert

IPC: H01L023/02

CPC classification number: H01L24/83 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/97 ,  H01L2223/5448 ,  H01L2223/54486 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/20 ,  H01L2224/24227 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

Abstract: Microelectronic packages including a microelectronic die disposed within a recess in a heat spreader and build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die and the heat spreader to form the microelectronic package, and methods for the fabrication of the same, including methods to align the microelectronic die within the heat spreader. In another embodiment, a microelectronic die is disposed on a heat spreader which has a filler material disposed therearound and build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die and the filler material to form the microelectronic package, and methods for the fabrication of the same, including methods to align the microelectronic die on the heat spreader.

Abstract translation: 然后在微电子管芯和散热器上制造微电子封装，其中包括设置在散热器的凹槽内的微电子管芯和介电材料和导电迹线的堆积层，以形成微电子封装，以及制造相同的方法 包括在散热器内对准微电子管芯的方法。 在另一个实施例中，微电子管芯设置在散热器上，散热器具有布置在其周围的填充材料，然后在微电子管芯和填充材料上制造介电材料和导电迹线层，形成微电子封装，以及方法 用于制造它们，包括在散热器上对准微电子管芯的方法。

公开(公告)号：US20030132824A1

公开(公告)日：2003-07-17

申请号：US10342778

申请日：2003-01-15

Applicant: Intel Corporation

Inventor： Qing Ma

IPC: H01H051/22

CPC classification number: B81B3/007 ,  B81B2201/014 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/056 ,  H01H1/20 ,  H01H59/0009 ,  H01H2001/0084 ,  H01H2059/0036 ,  H01H2059/0063 ,  Y10T29/49002 ,  Y10T29/49016 ,  Y10T29/49082 ,  Y10T29/49105 ,  Y10T29/49128 ,  Y10T29/49147

Abstract: A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic deflection of the beam as induced by the actuating electrode. The beam may have a cantilever or bridge structure, and may be hollow or otherwise shaped to have a high resonant frequency. Methods of forming the high-speed MEMS switch are also disclosed.

Abstract translation: 公开了一种具有高共振频率波束的微机电系统（MEMS）开关。 MEMS开关包括第一和第二间隔开的电触头和致动电极。 光束适于通过由致动电极引起的光束的静电偏转来建立电极之间的接触。 梁可以具有悬臂或桥结构，并且可以是中空的或以其它方式成形为具有高共振频率。 还公开了形成高速MEMS开关的方法。

公开(公告)号：US20030085109A1

公开(公告)日：2003-05-08

申请号：US10007941

申请日：2001-11-02

Applicant: Intel Corporation

Inventor： Qing Ma

IPC: H01H057/00

CPC classification number: H01H59/0009 ,  H01H2059/0036

Abstract: A microelectromechanical system (MEMS) switch has a beam with a high-resonance frequency. The MEMS switch includes a substrate having an electrical contact and a hexsil beam coupled to the substrate in order to transfer electric signals between the beam and the contact when an actuating voltage is applied to the switch. A method of fabricating a MEMS switch includes forming a substrate having a contact and forming a beam. The method further includes attaching the beam to the substrate such that the beam is maneuverable into and out of contact with the substrate.

Abstract translation: 微机电系统（MEMS）开关具有高谐振频率的光束。 MEMS开关包括具有电触点和耦合到衬底的六极管的衬底，以便当致动电压施加到开关时，在光束和触点之间传递电信号。 制造MEMS开关的方法包括形成具有接触并形成束的衬底。 该方法还包括将光束附接到基板，使得光束可操纵地进入和离开与基板的接触。