In a method of cleaning metal-containing deposits such as tantalum from a surface of a process chamber component, such as a metal surface, the surface is immersed in a cleaning solution. In one version, the cleaning solution is a solution having HF and HNO3 in a ratio that removes deposits from the surface substantially without eroding the surface. In another version, the cleaning solution is a solution having KOH and H2O2. The solution can be treated after cleaning the surface to recover tantalum-containing materials and one or more of the cleaning solutions.