Invention Application
- Patent Title: Low temperature sin deposition methods
- Patent Title (中): 低温沉积法
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Application No.: US10970317Application Date: 2004-10-20
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Publication No.: US20060084283A1Publication Date: 2006-04-20
- Inventor: Ajit Paranjpe , Kangzhan Zhang , Brendan McDougall , Wayne Vereb , Michael Patten , Alan Goldman , Somnath Nag
- Applicant: Ajit Paranjpe , Kangzhan Zhang , Brendan McDougall , Wayne Vereb , Michael Patten , Alan Goldman , Somnath Nag
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A silicon nitride layer is deposited on a substrate within a processing region by introducing a silicon containing precursor into the processing region, exhausting gases in the processing region including the silicon containing precursor while uniformly, gradually reducing a pressure of the processing region, introducing a nitrogen containing precursor into the processing region, and exhausting gases in the processing region including the nitrogen containing precursor while uniformly, gradually reducing a pressure of the processing region. During the steps of exhausting, the slope of the pressure decrease with respect to time is substantially constant.
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