Invention Application
- Patent Title: RADITION-EMITTIN SEMICONDUCTOR COMPONENT,RECEPTACLE FOR A RADIATION-EMITTING SEMICONDUCTOR COMPONENT,AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR COMPONENT
- Patent Title (中): 辐射发射半导体元件,辐射发射半导体元件的接收器和用于产生辐射发射半导体元件的方法
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Application No.: US12680674Application Date: 2008-09-12
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Publication No.: US20110057218A1Publication Date: 2011-03-10
- Inventor: Jörg Sorg , Stefan Gruber
- Applicant: Jörg Sorg , Stefan Gruber
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Priority: DE102007046744.5 20070928; DE102008005345.7 20080121
- International Application: PCT/DE2008/001533 WO 20080912
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/00

Abstract:
A semiconductor based component with radiation-emitting properties. A glass substrate (1) is provided, which has a first surface (2) and a second surface (1), where a semiconductor element (5) with radiation-emitting properties is accommodated on the first surface (2). Also disclosed is a method for fabricating a semiconductor based component, with the following steps: providing a glass substrate (1), application of a semiconductor element (5) to the first surface (2) of the glass substrate. Also disclosed is a receptacle for a semiconductor based component in which two electrical contact areas (13) are provided, which can be electrically connected to contact areas (7) of the semiconductor based component.
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