Invention Application
US20110058243A1 METHODS FOR FORMING LAYERS WITHIN A MEMS DEVICE USING LIFTOFF PROCESSES
审中-公开
在使用提升过程的MEMS器件中形成层的方法
- Patent Title: METHODS FOR FORMING LAYERS WITHIN A MEMS DEVICE USING LIFTOFF PROCESSES
- Patent Title (中): 在使用提升过程的MEMS器件中形成层的方法
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Application No.: US12946583Application Date: 2010-11-15
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Publication No.: US20110058243A1Publication Date: 2011-03-10
- Inventor: Chun-Ming Wang
- Applicant: Chun-Ming Wang
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Main IPC: G02B26/02
- IPC: G02B26/02 ; H01L21/302

Abstract:
Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
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