Invention Application
- Patent Title: DISPERSIONS OF SUBMICRON DOPED SILICON PARTICLES
- Patent Title (中): 分散的硅酸钠颗粒的分散体
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Application No.: US13240785Application Date: 2011-09-22
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Publication No.: US20120012032A1Publication Date: 2012-01-19
- Inventor: Xiangxin Bi , Nobuyuki Kambe , Craig R. Horne , James T. Gardner , Ronald J. Mosso , Shivkumar Chiruvolu , Sujeet Kumar , William E. McGovern , Pierre J. DeMascarel , Robert B. Lynch
- Applicant: Xiangxin Bi , Nobuyuki Kambe , Craig R. Horne , James T. Gardner , Ronald J. Mosso , Shivkumar Chiruvolu , Sujeet Kumar , William E. McGovern , Pierre J. DeMascarel , Robert B. Lynch
- Main IPC: C09D1/00
- IPC: C09D1/00 ; B82Y30/00

Abstract:
Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.
Public/Granted literature
- US08435477B2 Dispersions of submicron doped silicon particles Public/Granted day:2013-05-07
Information query
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