Invention Application
US20120126415A1 Filling Cavities in Semiconductor Structures 有权
半导体结构中的填充腔

Filling Cavities in Semiconductor Structures
Abstract:
High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
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