公开(公告)号：US08236691B2

公开(公告)日：2012-08-07

申请号：US12347721

申请日：2008-12-31

Applicant: Yakov Shor ,  Semeon Altshuler ,  Maor Rotlain ,  Yigal Alon ,  Dror Horvitz

Inventor： Yakov Shor ,  Semeon Altshuler ,  Maor Rotlain ,  Yigal Alon ,  Dror Horvitz

IPC: H01L21/60

CPC classification number: H01L21/28568 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76879

Abstract: A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and seamless.

Abstract translation: 一种用于高纵横比插塞的塞子填充方法，其中成核层形成在通孔的底部而不是在侧壁上。 塞子填充沿着通孔的底部到顶部的方向，而不是从侧壁向内。 所产生的插头是无效的和无缝的。

公开(公告)号：US20100167532A1

公开(公告)日：2010-07-01

申请号：US12347721

申请日：2008-12-31

Applicant: Yakov Shor ,  Semeon Altshuler ,  Maor Rotlain ,  Yigal Alon ,  Dror Horvitz

Inventor： Yakov Shor ,  Semeon Altshuler ,  Maor Rotlain ,  Yigal Alon ,  Dror Horvitz

IPC: H01L21/60

CPC classification number: H01L21/28568 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76879

Abstract: A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and seamless.

Abstract translation: 一种用于高纵横比插塞的塞子填充方法，其中成核层形成在通孔的底部而不是在侧壁上。 塞子填充沿着通孔的底部到顶部的方向，而不是从侧壁向内。 所产生的插头是无效的和无缝的。

公开(公告)号：US08772155B2

公开(公告)日：2014-07-08

申请号：US12948897

申请日：2010-11-18

Applicant: Shai Haimson ,  Avi Rozenblat ,  Dror Horvitz ,  Maor Rotlain ,  Rotem Drori

Inventor： Shai Haimson ,  Avi Rozenblat ,  Dror Horvitz ,  Maor Rotlain ,  Rotem Drori

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: H01L23/49827 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

Abstract translation: 高纵横比沟槽可以填充从底部比沟槽的顶部生长更多的金属。 结果，在一些实施例中，可能会减少在填充期间形成接缝或顶部顶部沟槽的趋势。 鼓励金属生长的材料可以在底部的沟槽中形成，同时离开顶部的顶部区域没有这种材料，以鼓励从底部向上生长。

公开(公告)号：US08461043B2

公开(公告)日：2013-06-11

申请号：US13083868

申请日：2011-04-11

Applicant: Avraham Rozenblat ,  Shai Haimson ,  Rotem Drori ,  Maor Rotlain ,  Dror Horvitz

Inventor： Avraham Rozenblat ,  Shai Haimson ,  Rotem Drori ,  Maor Rotlain ,  Dror Horvitz

IPC: H01L21/44

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Plug contacts may be formed with barrier layers having thicknesses of less than 50 Å in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.

Abstract translation: 在一些实施例中，插塞触点可以形成有厚度小于的阻挡层。 在一个实施例中，阻挡层可以通过化学气相沉积乙硼烷形成，在金属接触件和周围电介质之间以及在金属接触件与衬底和/或衬底触点之间形成硼层。 该硼层可以是基本上纯的硼和硼硅化物。

公开(公告)号：US20120256317A1

公开(公告)日：2012-10-11

申请号：US13083868

申请日：2011-04-11

Applicant: Avraham Rozenblat ,  Shai Haimson ,  Rotem Drori ,  Maor Rotlain ,  Dror Horvitz

Inventor： Avraham Rozenblat ,  Shai Haimson ,  Rotem Drori ,  Maor Rotlain ,  Dror Horvitz

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Plug contacts may be formed with barrier layers having thicknesses of less than 50 Å in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.

Abstract translation: 在一些实施例中，插塞触点可以形成有厚度小于的阻挡层。 在一个实施例中，阻挡层可以通过化学气相沉积乙硼烷形成，在金属接触件和周围电介质之间以及在金属接触件与衬底和/或衬底触点之间形成硼层。 该硼层可以是基本上纯的硼和硼硅化物。

公开(公告)号：US20120126415A1

公开(公告)日：2012-05-24

申请号：US12948897

申请日：2010-11-18

Applicant: Shai Haimson ,  Avi Rozenblat ,  Dror Horvitz ,  Maor Rotlain ,  Rotem Drori

Inventor： Shai Haimson ,  Avi Rozenblat ,  Dror Horvitz ,  Maor Rotlain ,  Rotem Drori

IPC: H01L23/48 ,  H01L21/3205

CPC classification number: H01L23/49827 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.

Abstract translation: 高纵横比沟槽可以填充从底部比沟槽的顶部生长更多的金属。 结果，在一些实施例中，可能会减少在填充期间形成接缝或顶部顶部沟槽的趋势。 鼓励金属生长的材料可以在底部的沟槽中形成，同时离开顶部的顶部区域没有这种材料，以鼓励从底部向上生长。