Invention Application
- Patent Title: METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE
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Application No.: US13739183Application Date: 2013-01-11
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Publication No.: US20130183794A1Publication Date: 2013-07-18
- Inventor: Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
- Applicant: First Solar, Inc.
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Public/Granted literature
- US09006020B2 Method and system of providing dopant concentration control in different layers of a semiconductor device Public/Granted day:2015-04-14
Information query
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