公开(公告)号：US11769844B2

公开(公告)日：2023-09-26

申请号：US17505291

申请日：2021-10-19

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US10529883B2

公开(公告)日：2020-01-07

申请号：US14531425

申请日：2014-11-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20180323332A1

公开(公告)日：2018-11-08

申请号：US16040173

申请日：2018-07-19

Applicant: First Solar, Inc.

Inventor： John Barden ,  Changming Jin ,  Feng Liao ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/18 ,  C23C14/58 ,  C23C14/02 ,  H01L21/677 ,  H01L21/67 ,  C23C14/22 ,  C23C14/06

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

公开(公告)号：US20140216550A1

公开(公告)日：2014-08-07

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract translation: 光电器件包括衬底结构和p型半导体吸收层，该衬底结构包括CdSSe层。 光电器件可以替代地包括CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSSe层。 该方法包括在CdSSe层上形成p型吸收层。

公开(公告)号：US20130203202A1

公开(公告)日：2013-08-08

申请号：US13754535

申请日：2013-01-30

Applicant: FIRST SOLAR, INC.

Inventor： Gang Xiong ,  John Barden ,  Feng Liao ,  Rick C. Powell ,  Changming Jin

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

Abstract translation: 蒸气输送沉积系统和方法，其包括蒸发器和分配器单元以及用于将薄膜层沉积与一个或多个沉积前或沉积后工艺集成的至少一个辅助处理单元。

公开(公告)号：US20240088319A1

公开(公告)日：2024-03-14

申请号：US18507816

申请日：2023-11-13

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20170271533A1

公开(公告)日：2017-09-21

申请号：US15612078

申请日：2017-06-02

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US12119416B2

公开(公告)日：2024-10-15

申请号：US17287988

申请日：2019-10-23

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0216 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/02167 ,  H01L31/02963 ,  H01L31/073

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.