Invention Application
- Patent Title: Methods of Forming Through Substrate Interconnects
-
Application No.: US14561642Application Date: 2014-12-05
-
Publication No.: US20150087147A1Publication Date: 2015-03-26
- Inventor: Dave Pratt , Andy Perkins
- Applicant: Micron Technology, Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02
Abstract:
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
Public/Granted literature
- US09685375B2 Methods of forming through substrate interconnects Public/Granted day:2017-06-20
Information query
IPC分类:
