公开(公告)号：US10685882B2

公开(公告)日：2020-06-16

申请号：US15602627

申请日：2017-05-23

Applicant: Micron Technology, Inc.

Inventor： Dave Pratt ,  Andy Perkins

IPC: H01L21/768 ,  H01L21/02

Abstract: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

公开(公告)号：US09685375B2

公开(公告)日：2017-06-20

申请号：US14561642

申请日：2014-12-05

Applicant: Micron Technology, Inc.

Inventor： Dave Pratt ,  Andy Perkins

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76898 ,  H01L21/02282 ,  H01L21/76831

Abstract: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

公开(公告)号：US08927410B2

公开(公告)日：2015-01-06

申请号：US14100893

申请日：2013-12-09

Applicant: Micron Technology, Inc.

Inventor： Dave Pratt ,  Andy Perkins

IPC: H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/02282 ,  H01L21/76831

Abstract: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

Abstract translation: 形成贯穿基板互连的方法包括将通孔形成为半导体基板。 通孔延伸到基板的半导体材料中。 施加液体电介质以将通孔的侧壁的至少顶部最外部分相对于基底的最初形成通孔的一侧排列。 液体电介质在通孔内固化。 导电材料形成在固化电介质上的通孔中，并且通过基板互连形成有导电材料。

公开(公告)号：US20170256452A1

公开(公告)日：2017-09-07

申请号：US15602627

申请日：2017-05-23

Applicant: Micron Technology, Inc.

Inventor： Dave Pratt ,  Andy Perkins

IPC: H01L21/768 ,  H01L21/02

Abstract: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

公开(公告)号：US20150087147A1

公开(公告)日：2015-03-26

申请号：US14561642

申请日：2014-12-05

Applicant: Micron Technology, Inc.

Inventor： Dave Pratt ,  Andy Perkins

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76898 ,  H01L21/02282 ,  H01L21/76831

Abstract: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

公开(公告)号：US20140099786A1

公开(公告)日：2014-04-10

申请号：US14100893

申请日：2013-12-09

Applicant: Micron Technology, Inc.

Inventor： Dave Pratt ,  Andy Perkins

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/02282 ,  H01L21/76831

Abstract: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.

Abstract translation: 形成贯穿基板互连的方法包括将通孔形成为半导体基板。 通孔延伸到基板的半导体材料中。 施加液体电介质以将通孔的侧壁的至少顶部最外部分相对于基底的最初形成通孔的一侧排列。 液体电介质在通孔内固化。 导电材料形成在固化电介质上的通孔中，并且通过基板互连形成有导电材料。