Invention Application
- Patent Title: ORGANIC THIN FILM PASSIVATION OF METAL INTERCONNECTIONS
- Patent Title (中): 有机薄膜钝化金属互连
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Application No.: US15018686Application Date: 2016-02-08
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Publication No.: US20160155667A1Publication Date: 2016-06-02
- Inventor: Aleksandar ALEKSOV , Tony DAMBRAUSKAS , Danish FARUQUI , Mark S. HLAD , Edward R. PRACK
- Applicant: INTEL CORPORATION
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/02 ; H01L21/768 ; H01L23/00 ; H01L21/027

Abstract:
Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.
Public/Granted literature
- US09583390B2 Organic thin film passivation of metal interconnections Public/Granted day:2017-02-28
Information query
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