Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14684445Application Date: 2015-04-13
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Publication No.: US20160276429A1Publication Date: 2016-09-22
- Inventor: I-Ming Tseng , Wen-An Liang , Rai-Min Huang , Chen-Ming Huang , Tong-Jyun Huang , Kuan-Hsien Li
- Applicant: United Microelectronics Corp.
- Priority: TW104108619 20150318
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/762 ; H01L29/78 ; H01L21/8234
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a spacer layer and a dummy gate structure. The fin shaped structure is disposed on a substrate, wherein the fin shaped structure has a trench. The spacer layer is disposed on sidewalls of the trench. The dummy gate structure is disposed across the trench and includes a portion thereof disposed in the trench.
Information query
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