Invention Application
US20160284807A1 METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUIT
审中-公开
形成SOI衬底的方法，特别是FDSOI，适用于具有不同厚度的栅极电介质的晶体管的类型，相应的衬底和集成电路
- Patent Title: METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUIT
- Patent Title (中): 形成SOI衬底的方法，特别是FDSOI，适用于具有不同厚度的栅极电介质的晶体管的类型，相应的衬底和集成电路
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Application No.: US14930324Application Date: 2015-11-02
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Publication No.: US20160284807A1Publication Date: 2016-09-29
- Inventor: David Petit , Frederic Monsieur , Xavier Federspiel , Gregory Bidal
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
- Applicant Address: FR Crolles FR Montrouge
- Assignee: STMICROELECTRONICS (CROLLES 2) SAS,STMICROELECTRONICS SA
- Current Assignee: STMICROELECTRONICS (CROLLES 2) SAS,STMICROELECTRONICS SA
- Current Assignee Address: FR Crolles FR Montrouge
- Priority: FR1552623 20150327
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/8234 ; H01L29/10 ; H01L27/088 ; H01L29/78 ; H01L29/06 ; H01L21/84 ; H01L27/12
Abstract:
A substrate of the silicon-on-insulator type is formed from an initial substrate of the silicon-on-insulator type having a semiconductor film on top of a buried insulating layer itself situated on top of a carrier substrate. A localized modification of a thickness of the semiconductor film is made so as to form a semiconductor film having different thicknesses in different regions.
Information query
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