公开(公告)号：US20160284807A1

公开(公告)日：2016-09-29

申请号：US14930324

申请日：2015-11-02

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： David Petit ,  Frederic Monsieur ,  Xavier Federspiel ,  Gregory Bidal

IPC: H01L29/423 ,  H01L21/8234 ,  H01L29/10 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L29/42364 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/84 ,  H01L27/088 ,  H01L27/1203 ,  H01L27/127 ,  H01L29/0653 ,  H01L29/1033 ,  H01L29/7838

Abstract: A substrate of the silicon-on-insulator type is formed from an initial substrate of the silicon-on-insulator type having a semiconductor film on top of a buried insulating layer itself situated on top of a carrier substrate. A localized modification of a thickness of the semiconductor film is made so as to form a semiconductor film having different thicknesses in different regions.

Abstract translation: 绝缘体上硅型的衬底由绝缘体上硅型的初始衬底形成，其中半导体膜位于位于载体衬底顶部的掩埋绝缘层本身的顶部上。 制造半导体膜的厚度的局部修改以便形成在不同区域中具有不同厚度的半导体膜。