Invention Application
- Patent Title: Forming Semiconductor Structure with Device Layers and TRL
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Application No.: US15386014Application Date: 2016-12-21
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Publication No.: US20170101309A1Publication Date: 2017-04-13
- Inventor: Michael A. Stuber
- Applicant: QUALCOMM INCORPORATED
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00
Abstract:
A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.
Public/Granted literature
- US09783414B2 Forming semiconductor structure with device layers and TRL Public/Granted day:2017-10-10
Information query
