A semiconductor process includes the following step. A metal gate strip and a cap layer are sequentially formed in a trench of a dielectric layer. The cap layer and the metal gate strip are cut off to form a plurality of caps on a plurality of metal gates, and a gap isolates adjacent caps and adjacent metal gates. An isolation material fills in the gap. The present invention also provides semiconductor structures formed by said semiconductor process. For example, the semiconductor structure includes a plurality of stacked structures in a trench of a dielectric layer, where each of the stacked structures includes a metal gate and a cap on the metal gate, where an isolation slot isolates and contacts adjacent stacked structures at end to end, and the isolation slot has same level as the stacked structures.