Invention Application
- Patent Title: Methods And Apparatus For Selective Dry Etch
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Application No.: US15455766Application Date: 2017-03-10
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Publication No.: US20170263438A1Publication Date: 2017-09-14
- Inventor: Ning Li , Mihaela Balseanu , Li-Qun Xia , Dongqing Yang , Anchuan Wang
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/311
Abstract:
Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
Public/Granted literature
- US10134581B2 Methods and apparatus for selective dry etch Public/Granted day:2018-11-20
Information query
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