• Patent Title: MEMORY SUBSYSTEM WITH NARROW BANDWIDTH REPEATER CHANNEL
  • Application No.: US15089453
    Application Date: 2016-04-01
  • Publication No.: US20170285992A1
    Publication Date: 2017-10-05
  • Inventor: Pete D VOGT
  • Applicant: Intel Corporation
  • Main IPC: G06F3/06
  • IPC: G06F3/06
MEMORY SUBSYSTEM WITH NARROW BANDWIDTH REPEATER CHANNEL
Abstract:
A system with memory includes a repeater architecture where memory connects to a host with one bandwidth, and repeats the channel with a lower bandwidth. A memory circuit includes a first group of signal lines to couple point-to-point between a first group of memory devices and a host device. The memory circuit includes a second group of signal lines to couple point-to-point between the first group of memory devices and a second group of memory devices. The second group of signal lines extends the memory channel to the second group of memory devices. The second group of signal lines includes fewer data signal lines than the first group of signal lines, to support a lower bandwidth than the first group of signal lines on the memory channel.
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