The present invention disclosed a CMOS sensing component, a CMOS single chip and a method of manufacturing the same. The CMOS single chip comprises a movable film, at least one support pillar, a base metal layer and a circuit integration. The movable film is disposed on a top layer of the CMOS single chip and has a plurality of through-vias. The support pillar is disposed under the movable film to provide a supporting force of the movable film. The base metal layer is formed under the support pillars and isolated from the support pillars, and faces towards the movable film to form a micro capacitor to sense one of the outside sensing signals, the area of the base metal layer larger than the area of the movable film. The circuit integration is formed under the base metal layer, or formed under the base metal layer and on the side of the movable film, and connected to the movable film and the base metal layer, to provide operation voltages to the movable film and the base metal layer, and to receive the outside sensing signal generated sensed by the movable film and the base metal layer and convert the outside sensing signal into an output signal.