Invention Application
- Patent Title: Cluster processing system for forming a transition metal material
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Application No.: US16197048Application Date: 2018-11-20
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Publication No.: US20200161176A1Publication Date: 2020-05-21
- Inventor: Keith Tatseun WONG , Srinivas D. Nemani , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L23/532
Abstract:
Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.
Public/Granted literature
- US11756828B2 Cluster processing system for forming a transition metal material Public/Granted day:2023-09-12
Information query
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