公开(公告)号：US20230298893A1

公开(公告)日：2023-09-21

申请号：US18202838

申请日：2023-05-26

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Thomas Jongwan KWON ,  Sean KANG ,  Ellie Y. YIEH

IPC: H01L21/285 ,  C23C16/14 ,  H10B69/00 ,  C23C16/08 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/14 ,  H10B69/00 ,  C23C16/08 ,  C23C16/56 ,  H01L21/28568 ,  H01L21/76883 ,  H10B41/20

Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

公开(公告)号：US20170358490A1

公开(公告)日：2017-12-14

申请号：US15332737

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Sean KANG ,  Keith Tatseun WONG ,  He REN ,  Mehul B. NAIK ,  Ellie Y. YIEH ,  Srinivas D. NEMANI

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53257

Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

公开(公告)号：US20200161181A1

公开(公告)日：2020-05-21

申请号：US16669082

申请日：2019-10-30

Applicant: Applied Materials, Inc.

Inventor： Wenhui WANG ,  Huixiong DAI ,  Christopher S. NGAI ,  Liqi WU ,  Wenyu ZHANG ,  Yongmei CHEN ,  Hao CHEN ,  Keith Tatseun WONG ,  Ke CHANG

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/033 ,  H01L21/02

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

公开(公告)号：US20190019681A1

公开(公告)日：2019-01-17

申请号：US15648163

申请日：2017-07-12

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Shiyu SUN ,  Sean S. KANG ,  Nam Sung KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L29/66

Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

公开(公告)号：US20230122224A1

公开(公告)日：2023-04-20

申请号：US18072392

申请日：2022-11-30

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Andrew C. KUMMEL ,  James HUANG ,  Yunil CHO

IPC: C23C16/40 ,  C23C28/04 ,  C23C16/455

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20220310776A1

公开(公告)日：2022-09-29

申请号：US17210130

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Tony P. CHIANG

IPC: H01L49/02 ,  C23C16/40 ,  C23C14/06 ,  C23C16/455 ,  C23C28/04

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.

公开(公告)号：US20210317573A1

公开(公告)日：2021-10-14

申请号：US16902665

申请日：2020-06-16

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Andrew C. KUMMEL ,  James HUANG ,  Yunil CHO

IPC: C23C16/40 ,  C23C28/04 ,  C23C16/455

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20200098574A1

公开(公告)日：2020-03-26

申请号：US16696229

申请日：2019-11-26

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Thomas Jongwan KWON ,  Sean KANG ,  Ellie Y. YIEH

IPC: H01L21/285 ,  H01L27/115 ,  H01L21/768 ,  C23C16/56 ,  C23C16/08 ,  C23C16/14

Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

公开(公告)号：US20190371650A1

公开(公告)日：2019-12-05

申请号：US16407510

申请日：2019-05-09

Applicant: Applied Materials, Inc.

Inventor： Shiyu SUN ,  Keith Tatseun WONG ,  Kurtis LESCHKIES ,  Namsung KIM ,  Srinivas NEMANI

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/324

Abstract: Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate.

公开(公告)号：US20190051557A1

公开(公告)日：2019-02-14

申请号：US16102543

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Sean S. KANG ,  Keith Tatseun WONG ,  He REN ,  Mehul B. NAIK ,  Ellie Y. YIEH ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01L23/532

Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.