Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US16866360Application Date: 2020-05-04
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Publication No.: US20200266095A1Publication Date: 2020-08-20
- Inventor: Da-Jun Lin , Bin-Siang Tsai , Chich-Neng Chang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L23/522
Abstract:
A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.
Public/Granted literature
- US11049765B2 Semiconductor device Public/Granted day:2021-06-29
Information query
IPC分类:
