Invention Application
- Patent Title: CAP STRUCTURE FOR INTERCONNECT DIELECTRICS AND METHODS OF FABRICATION
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Application No.: US17125680Application Date: 2020-12-17
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Publication No.: US20220199544A1Publication Date: 2022-06-23
- Inventor: Shashi Vyas , Sudipto Naskar , Charles Wallace
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768

Abstract:
An integrated circuit structure includes a first interconnect level including a first dielectric between a pair of interconnect structures, a second interconnect level above the first interconnect level. The second interconnect level includes a cap structure including a second dielectric on the first dielectric, the cap structure includes a top surface and a sidewall surface and a liner comprising a third dielectric on the top surface and on the sidewall surface.
Public/Granted literature
- US12249577B2 Cap structure for interconnect dielectrics and methods of fabrication Public/Granted day:2025-03-11
Information query
IPC分类: