Invention Application
- Patent Title: METHODS FOR SELECTIVE DRY ETCHING GALLIUM OXIDE
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Application No.: US17836694Application Date: 2022-06-09
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Publication No.: US20220301883A1Publication Date: 2022-09-22
- Inventor: Feng Q. Liu , Lisa J. Enman , Lakmal C. Kalutarage , Mark J. Saly
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02
Abstract:
Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.
Public/Granted literature
- US11942330B2 Methods for selective dry etching gallium oxide Public/Granted day:2024-03-26
Information query
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