Invention Publication
- Patent Title: PHOTOVOLTAIC DEVICE INCLUDING A P-N JUNCTION AND METHOD OF MANUFACTURING
-
Application No.: US18372567Application Date: 2023-09-25
-
Publication No.: US20240030367A1Publication Date: 2024-01-25
- Inventor: Dan Damjanovic , Feng Liao , Rick Powell , Rui Shao , Jigish Trivedi , Zhibo Zhao
- Applicant: First Solar, Inc.
- Applicant Address: US AZ Tempe
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US AZ Tempe
- The original application number of the division: US17505291 2021.10.19
- Main IPC: H01L31/0296
- IPC: H01L31/0296 ; H01L31/073 ; H01L31/18
Abstract:
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.
Information query
IPC分类:
