Invention Publication
- Patent Title: SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
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Application No.: US18444785Application Date: 2024-02-19
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Publication No.: US20240194797A1Publication Date: 2024-06-13
- Inventor: Chun-Sung Huang , CHI REN
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: TW 0129303 2021.08.09
- The original application number of the division: US17472586 2021.09.11
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/28 ; H01L29/423 ; H01L29/66
Abstract:
Abstract of Disclosure A control gate is formed on the substrate. A source diffusion region is formed in the substrate and on a first side of the control gate. A select gate is formed on the source diffusion region. The select gate has a recessed top surface. A charge storage structure is formed under the control gate. A first spacer is formed between the select gate and the control gate and between the charge storage structure and the select gate. A wordline gate is formed on a second side of the control gate opposite to the select gate. A second spacer is formed between the wordline gate and the control gate. A drain diffusion region is formed in the substrate and adjacent to the wordline gate.
Public/Granted literature
- US12249658B2 Semiconductor memory device and fabrication method thereof Public/Granted day:2025-03-11
Information query
IPC分类:
