Invention Grant
- Patent Title: Semiconductor memory device and fabrication method thereof
-
Application No.: US18444785Application Date: 2024-02-19
-
Publication No.: US12249658B2Publication Date: 2025-03-11
- Inventor: Chun-Sung Huang , Chi Ren
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW110129303 20210809
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/28 ; H01L29/423 ; H01L29/66
Abstract:
A control gate is formed on the substrate. A source diffusion region is formed in the substrate and on a first side of the control gate. A select gate is formed on the source diffusion region. The select gate has a recessed top surface. A charge storage structure is formed under the control gate. A first spacer is formed between the select gate and the control gate and between the charge storage structure and the select gate. A wordline gate is formed on a second side of the control gate opposite to the select gate. A second spacer is formed between the wordline gate and the control gate. A drain diffusion region is formed in the substrate and adjacent to the wordline gate.
Public/Granted literature
- US20240194797A1 SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2024-06-13
Information query
IPC分类:
