Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US18791454Application Date: 2024-08-01
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Publication No.: US20240395909A1Publication Date: 2024-11-28
- Inventor: Chin-Hung Chen , Ssu-I Fu , Chih-Kai Hsu , Chia-Jung Hsu , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN201910180883.1 20190311
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/033 ; H01L21/308 ; H01L21/8234 ; H01L21/8238 ; H01L21/84 ; H01L27/06 ; H01L27/088 ; H01L27/12 ; H01L29/78
Abstract:
A method for fabricating semiconductor device includes: forming a first semiconductor layer and an insulating layer on a substrate; removing the insulating layer and the first semiconductor layer to form openings; forming a second semiconductor layer in the openings; and patterning the second semiconductor layer, the insulating layer, and the first semiconductor layer to form fin-shaped structures.
Information query
IPC分类:
