Disclosed is a semiconductor device comprising an active pattern including first and second edge parts spaced apart from each other in a first direction, a word line extending along a second direction between the first and second edge parts, a bit line extending along a third direction on the first edge part, a storage node contact on the second edge part, a first active pad between the bit line and the first edge part, and a second active pad between the storage node contact and the second edge part. The first active pad extends in the third direction more than the first edge part. The second active pad extends in a direction opposite to the third direction more than the second edge part.