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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明公开
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240290626A1

    公开(公告)日：2024-08-29

    申请号：US18587326

    申请日：2024-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Heejae Chae ,  Taejin Park ,  Hyunjin Lee ,  Hosang Lee ,  Yun Choi

    IPC: H01L21/308 ,  H01L21/027 ,  H01L21/311 ,  H10B12/00

    CPC classification number: H01L21/3086 ,  H01L21/0274 ,  H01L21/31144 ,  H10B12/50

    Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer in a surface of a cell region comprising a cell center region and a cell edge region surrounding the cell center region, forming an edge mask pattern on the surface of the cell edge region through a quadruple patterning process on the etch target layer, and forming a plurality of center mask patterns spaced apart from each other on the cell center region, and forming a first etch pattern on the cell edge region by etching the etch target layer by using the edge mask pattern and the plurality of center mask patterns as etch masks and forming a plurality of second etch patterns spaced apart from each other on the cell center region.

    Substrate debonding apparatus
    4.
    发明授权
    Substrate debonding apparatus 有权

    公开(公告)号：US11581202B2

    公开(公告)日：2023-02-14

    申请号：US17078190

    申请日：2020-10-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ilyoung Han ,  Kyoungran Kim ,  Chulhyun Park ,  Minjae Shin ,  Geunsik Oh ,  Hyunjin Lee ,  Soonwon Lee ,  Nungpyo Hong

    IPC: B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00

    Abstract: A substrate debonding apparatus configured to separate a support substrate attached to a first surface of a device substrate by an adhesive layer, the substrate debonding apparatus including a substrate chuck configured to support a second surface of the device substrate, the second surface being opposite to the first surface of the device substrate; a light irradiator configured to irradiate light to an inside of the adhesive layer; and a mask between the substrate chuck and the light irradiator, the mask including an opening through which an upper portion of the support substrate is exposed, and a first cooling passage or a second cooling passage, the first cooling passage being configured to provide a path in which a coolant is flowable, the second cooling passage being configured to provide a path in which air is flowable and to provide part of the air to a central portion of the opening.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250071969A1

    公开(公告)日：2025-02-27

    申请号：US18623816

    申请日：2024-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun Choi ,  Seungmuk Kim ,  Inwoo Kim ,  Sohyun Park ,  Hanseong Shin ,  Kiseok Lee ,  Hyunjin Lee ,  Hosang Lee ,  Hongjun Lee ,  Heejae Chae

    IPC: H10B12/00 ,  H01L21/027 ,  H01L21/311

    Abstract: A semiconductor device may include a plurality of active patterns disposed on a substrate, a gate structure extending in a first direction, a bit line structure extending in a second direction, and a plurality of capacitors electrically connected to the plurality of active patterns, respectively, the plurality of active patterns having a shape extending in a third direction oblique to the first and second directions, the gate structure passing through centers of the plurality of active patterns, the bit line structure connected to first end portions of the plurality of active patterns, the plurality of capacitors connected to second end portions of the plurality of active patterns, respectively, the first end portion and the second end portion positioned at opposite sides with respect to the gate structure, and the first end portion and the second end portion having point-symmetrical shapes with respect to a center of the active pattern.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20240431097A1

    公开(公告)日：2024-12-26

    申请号：US18545328

    申请日：2023-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyunjin Lee ,  Jongmin Kim ,  Kiseok Lee ,  Yun Choi ,  Inwoo Kim ,  Hui-Jung Kim ,  Sohyun Park ,  Heejae Chae

    IPC: H10B12/00

    Abstract: Disclosed is a semiconductor device comprising an active pattern including first and second edge parts spaced apart from each other in a first direction, a word line extending along a second direction between the first and second edge parts, a bit line extending along a third direction on the first edge part, a storage node contact on the second edge part, a first active pad between the bit line and the first edge part, and a second active pad between the storage node contact and the second edge part. The first active pad extends in the third direction more than the first edge part. The second active pad extends in a direction opposite to the third direction more than the second edge part.

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