Invention Grant
- Patent Title: Focused electron and ion beam systems
- Patent Title (中): 聚焦电子和离子束系统
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Application No.: US10232502Application Date: 2002-08-30
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Publication No.: US06768120B2Publication Date: 2004-07-27
- Inventor: Ka-Ngo Leung , Jani Reijonen , Arun Persaud , Qing Ji , Ximan Jiang
- Applicant: Ka-Ngo Leung , Jani Reijonen , Arun Persaud , Qing Ji , Ximan Jiang
- Main IPC: H01J2700
- IPC: H01J2700

Abstract:
An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.
Public/Granted literature
- US20040036032A1 Focused electron and ion beam systems Public/Granted day:2004-02-26
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