Abstract:
An ion source called as a Bernas-type ion source is additionally provided with a positive electrode and a bias power source. The positive electrode is provided in a plasma production chamber and is electrically isolated therefrom. The positive electrode has three openings at least at both sides of a X direction along a magnetic field produced in a magnetic field generator and at a side of an ion extraction opening (a side of ion beam extraction direction). The bias power source applies a positive bias voltage to the positive electrode and to the plasma production chamber. With combination of constituent elements, the positive electrode serves to push back the ion in the plasma and further functions to suck a secondary electron in the plasma, thereby increase the rate of the multiply charged ion in the plasma.
Abstract:
The object of the present invention is to provide an electrospray ionization mass analysis apparatus and the method thereof provided with an ESI ion source that can be directly coupled to a micro LC. The present invention provides an electrospray ionization mass analysis apparatus characterized in that a sample solution is led into a capillary tube, and high voltage is applied to the tip of this capillary tube, thereby allowing a spray ion flow of the aforementioned solution to be generated by an electrospray ion source provided therein. The ion flow generated by this ion source is led to an ion storage type spectrometer disposed in an vacuum chamber where it is subjected to mass sweeping, and the swept ion is detected by a detector so that a mass spectrum is obtained. This electrospray ionization mass analysis apparatus is further characterized by comprising a high voltage DC power source for application of the aforementioned high voltage formed by AC voltage superimposed on the DC voltage, and a AC power source. This invention ensures stable and highly sensitive ESI ionization to be performed at a flow rate ranging from several 10 &mgr;L/min to several &mgr;L/min.
Abstract:
A gas delivery system for an ion implantation system comprises a gas source at a first voltage potential and an ion source at a second voltage potential which is larger than the first voltage potential. The system further comprises an electrically insulative connector coupled between the gas source and the ion source. The present invention also comprises a method of delivering gas to an ion implantation system which comprises maintaining a voltage potential of a source gas at a storage location at a first voltage potential that is less than a second voltage potential at an ion source of the ion implantation system and delivering the source gas from the storage location to the ion source.
Abstract:
The ionization efficiency of a mass spectrometer is increased by creating a potential well between the electron source and the electron collector. The potential well is created by applying to the collector a reflection potential having an amplitude which is the same as or substantially the same as the amplitude of the potential applied to the electron source and a polarity which is the same as the polarity of the electron source potential. The potentials applied to the electron source and electron collector are relative to the ionization region effected between the source and collector. Many of the electrons produced by the electron source oscillate back and forth in the potential well thereby allowing those electrons a greater opportunity to interact with sample molecules to thus increase ionization efficiency.
Abstract:
An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.) during ionization of the vaporized decaborane to prevent dissociation of vaporized decaborane molecules into atomic boron ions. In addition, the energy-emitting element is operated at a sufficiently low power level to minimize plasma density within the ionization chamber (108) to prevent additional dissociation of the vaporized decaborane molecules by the plasma itself.
Abstract:
An ECR ion-beam source for use in an ion implanter has a sealed plasma chamber in which plasma is excited by microwave radiation of 2.45 GHz in combination with an external magnetic field generated by permanent magnets surrounding the plasma chamber. The magnets cause electron-cyclotron resonance for the electrons of the plasma thus creating conditions for efficient absorption of the microwave energy. The same magnets generate a magnetic field, which compresses the plasma toward the center for confining the plasma within the plasma chamber. The ion source also has an RF pumping unit that pumps into the plasma the RF energy. The RF pumping unit has a unique additional function of RF magnetron sputtering of solid targets converted into a gaseous working medium used for implantation in an ionized form. For obtaining elongated belt-type ion beams (having a width of 1 m or longer), the ion source may contain a microwave pumping system having several output windows arranged in series along the axis of the plasma chamber and on diametrically opposite sides thereof. The windows are continuously cleaned from the contaminants that might precipitate onto their surfaces. A standard-type sand blaster can be used for cleaning of the windows.
Abstract:
A new method and apparatus to produce drops with diameters several tens of nanometers and/or positive or negative ions with a wide range of chemical composition and masses as large as several kiloDalton is based on creating Taylor cone-jets of high electrical conductivity, moderate viscosity, and low volatility liquids under reduced pressure. The liquid is supplied at a controlled flow rate into a region at low pressure exposed to an electric field sufficient to electrically atomize it. Suitably charged, shaped and placed electrodes create the necessary electric field to form the Taylor cone and extract the charged particles it produces, with a desired energy and direction. Subsequent ion manipulation supplies beams of ions and/or nanoparticles for applications such as electrical propulsion or surface treatment. No liquids suitable to practice this invention have been known in the past and are introduced here as a key aspect of the invention. They are such as electrolytes of formamide (or organic liquids such as amides, alcohols, glycols, esters, ketones, organic phosphates or carbonates, etc., and mixtures of one or more of these components), ionic liquids (neat or mixed with other ionic liquids, molecular solvents and/or salts), molten salts and inorganic acids.
Abstract:
An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.
Abstract:
A cathodic arc plasma source has an anode formed of a plurality of spaced baffles which extend beyond the active cathode surface of the cathode. With the open baffle structure of the anode, most macroparticles pass through the gaps between the baffles and reflect off the baffles out of the plasma stream that enters a filter. Thus the anode not only has an electrical function but serves as a prefilter. The cathode has a small diameter, e.g. a rod of about ¼ inch (6.25 mm) diameter. Thus the plasma source output is well localized, even with cathode spot movement which is limited in area, so that it effectively couples into a miniaturized filter. With a small area cathode, the material eroded from the cathode needs to be replaced to maintain plasma production. Therefore, the source includes a cathode advancement or feed mechanism coupled to cathode rod. The cathode also requires a cooling mechanism. The movable cathode rod is housed in a cooled metal shield or tube which serves as both a current conductor, thus reducing ohmic heat produced in the cathode, and as the heat sink for heat generated at or near the cathode. Cooling of the cathode housing tube is done by contact with coolant at a place remote from the active cathode surface. The source is operated in pulsed mode at relatively high currents, about 1 kA. The high arc current can also be used to operate the magnetic filter. A cathodic arc plasma deposition system using this source can be used for the deposition of ultrathin amorphous hard carbon (a-C) films for the magnetic storage industry.
Abstract:
The present invention provides a method of extending, i.e. prolonging, the operating lifetime of hot cathode discharge ion source by utilizing and introducing a nitrogen-containing co-bleed gas into an ion implantation apparatus which contains at least a hot cathode discharge ion source and an ion implantation gas such as GeF4.