Invention Grant
US06768668B2 Converting volatile memory to non-volatile memory 有权
将易失性存储器转换为非易失性存储器

  • Patent Title: Converting volatile memory to non-volatile memory
  • Patent Title (中): 将易失性存储器转换为非易失性存储器
  • Application No.: US10117665
    Application Date: 2002-04-04
  • Publication No.: US06768668B2
    Publication Date: 2004-07-27
  • Inventor: Raj Kumar Jain
  • Applicant: Raj Kumar Jain
  • Main IPC: G11C1100
  • IPC: G11C1100
Converting volatile memory to non-volatile memory
Abstract:
The invention relates to a method for converting volatile memory cells to non-volatile memory cells with minimal modifications. There is included a volatile memory cell which is modified to permanently retain data by using one refresh port to transmit an active low voltage signal and configuring one terminal of the storage transistor to receive either an active high or low voltage signal.
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