Invention Grant
- Patent Title: Converting volatile memory to non-volatile memory
- Patent Title (中): 将易失性存储器转换为非易失性存储器
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Application No.: US10117665Application Date: 2002-04-04
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Publication No.: US06768668B2Publication Date: 2004-07-27
- Inventor: Raj Kumar Jain
- Applicant: Raj Kumar Jain
- Main IPC: G11C1100
- IPC: G11C1100

Abstract:
The invention relates to a method for converting volatile memory cells to non-volatile memory cells with minimal modifications. There is included a volatile memory cell which is modified to permanently retain data by using one refresh port to transmit an active low voltage signal and configuring one terminal of the storage transistor to receive either an active high or low voltage signal.
Public/Granted literature
- US20020186580A1 Converting volatile memory to non-volatile memory Public/Granted day:2002-12-12
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