Invention Grant
- Patent Title: Method of forming bump
- Patent Title (中): 形成凸块的方法
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Application No.: US10063576Application Date: 2002-05-03
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Publication No.: US06875683B2Publication Date: 2005-04-05
- Inventor: Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee
- Applicant: Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee
- Applicant Address: TW Raohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Raohsiung
- Agency: Jianq Chyun IP Office
- Priority: TW91102990A 20020221
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L23/485 ; H01L21/44
Abstract:
A method of forming a bump on an active surface of a wafer is disclosed. The method of the invention forms an under ball metallurgy (UBM) onto the active surface of the wafer. Then, the UBM is partially removed until a portion of the active surface of the wafer is exposed. At least one conductive stud is bonded onto the non-removed UBM by wire bonding.
Public/Granted literature
- US20030157790A1 Method of forming bump Public/Granted day:2003-08-21
Information query
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