Invention Grant
- Patent Title: Extreme ultraviolet radiation imaging
- Patent Title (中): 极紫外线成像
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Application No.: US10373415Application Date: 2003-02-24
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Publication No.: US06972419B2Publication Date: 2005-12-06
- Inventor: Edita Tejnil
- Applicant: Edita Tejnil
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: G01N21/88
- IPC: G01N21/88 ; G01N21/956 ; G03F7/20 ; G21G5/00 ; G21K1/06
Abstract:
An extreme (EUV) lithography system includes optical elements which vary the wavelengths of radiation as a function of the angle of incidence on a mask to maximize the reflected radiation intensity.
Public/Granted literature
- US20050243390A1 EXTREME ULTRAVIOLET RADIATION IMAGING Public/Granted day:2005-11-03
Information query
