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    Method, program product and apparatus for modeling resist development of a lithography process
    1.
    发明授权
    Method, program product and apparatus for modeling resist development of a lithography process 有权
    方法，程序产品和设备，用于建模光刻工艺的抗蚀剂开发

    公开(公告)号：US08521481B2

    公开(公告)日：2013-08-27

    申请号：US11896292

    申请日：2007-08-30

    Applicant: Edita Tejnil

    Inventor： Edita Tejnil

    IPC: G06F7/60 ,  G06F17/10 ,  G06F17/50 ,  G03F1/00

    CPC classification number: G03F7/705

    Abstract: A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation includes a resist performance component, and the resist performance component includes a non-linear model of the resist performance.

    Abstract translation: 一种生成用于模拟光学成像系统的成像性能的模型的方法。 该方法包括以下步骤：定义光学成像系统和由光学成像系统利用的过程; 并且定义表示光学成像系统和过程的成像性能的模型方程，其中模型方程式包括抗蚀剂性能成分，并且抗蚀剂性能成分包括抗蚀剂性能的非线性模型。

    Methods for etching devices used in lithography
    2.
    发明授权
    Methods for etching devices used in lithography 失效
    用于光刻的蚀刻装置的方法

    公开(公告)号：US07732106B2

    公开(公告)日：2010-06-08

    申请号：US12254101

    申请日：2008-10-20

    Applicant: Edita Tejnil ,  Yan Borodovsky

    Inventor： Edita Tejnil ,  Yan Borodovsky

    IPC: G03F1/14 ,  G03F7/20

    CPC classification number: G03F1/80 ,  G03F1/28 ,  G03F1/32 ,  G03F7/70283 ,  G03F7/70291 ,  G03F7/70433

    Abstract: Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.

    Abstract translation: 用于光刻的蚀刻装置的方法。 在一个方面，一种方法包括在单个蚀刻中蚀刻衬底上的第一区域和第二区域。 第一区域是将用于将微电子器件图案化的辐射的零衍射级的强度衰减到第一程度。 第二区域是将辐射的零衍射级的强度衰减到第二程度。 第二范围与第一程度充分不同，以提高图案化微电子器件的质量。

    Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
    4.
    发明授权
    Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength 有权
    用于以第一波长检查并在第二波长的半导体制造期间暴露的反射掩模的方法和装置

    公开(公告)号：US06410193B1

    公开(公告)日：2002-06-25

    申请号：US09474857

    申请日：1999-12-30

    Applicant: Alan R. Stivers ,  Edita Tejnil

    Inventor： Alan R. Stivers ,  Edita Tejnil

    IPC: G03F900

    CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84 ,  G21K2201/067

    Abstract: A reflective mask is described having non-reflective and reflective regions, where the reflective regions are reflective of a first light that has an inspection wavelength and are reflective of a second light that has a semiconductor processing exposure wavelength. The non-reflective regions are less reflective of the first light and the second light than the reflective regions in order to create: 1) a first image with a contrast greater than 0.210 and that is formed by reflecting the first light off of the reflective mask; and 2) a second image with a contrast greater than 0.750 and that is formed by reflecting the second light off of the reflective mask.

    Abstract translation: 描述了具有非反射和反射区域的反射掩模，其中反射区域反射具有检测波长并且反射具有半导体处理曝光波长的第二光的第一光。 非反射区域比反射区域反射较少的第一光和第二光，以便产生：1）具有大于0.210的对比度的第一图像，并且通过将第一光从反射掩模反射而形成 ; 和2）具有大于0.750的对比度的第二图像，并且通过将第二光从反射掩模反射而形成。

    Method of performing multiple stage model calibration for optical imaging simulation models
    5.
    发明授权
    Method of performing multiple stage model calibration for optical imaging simulation models 有权
    对光学成像模拟模型进行多级模型校准的方法

    公开(公告)号：US07433791B2

    公开(公告)日：2008-10-07

    申请号：US11708137

    申请日：2007-02-20

    Applicant: Sangbong Park ,  Duan-Fu Stephen Hsu ,  Edita Tejnil

    Inventor： Sangbong Park ,  Duan-Fu Stephen Hsu ,  Edita Tejnil

    IPC: G01D18/00 ,  G01B9/00

    CPC classification number: G03F7/705

    Abstract: A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.

    Abstract translation: 校准光刻工艺的仿真模型的方法。 该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程，其中调整模型参数和对准参数，使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程，其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。

    Image focus monitor for alternating phase shift masks
    6.
    发明授权
    Image focus monitor for alternating phase shift masks 失效
    用于交替相移掩模的图像聚焦监视器

    公开(公告)号：US07033708B2

    公开(公告)日：2006-04-25

    申请号：US10442432

    申请日：2003-05-20

    Applicant: Edita Tejnil

    Inventor： Edita Tejnil

    IPC: G03F1/00 ,  G03F7/207 ,  C03B23/00 ,  G01B11/14

    CPC classification number: G03F1/30 ,  G03F7/70641

    Abstract: A focus monitor on an alternating phase shift mask may include sub-wavelength features which have a depth corresponding to an etch depth of primary features on the mask (e.g., a 180° etch depth), but which produce an effective phase shift of about 60° to 120°.

    Abstract translation: 交替相移掩模上的聚焦监视器可以包括具有对应于掩模上主要特征（例如，180°蚀刻深度）的蚀刻深度的深度的亚波长特征，但是产生约60°的有效相移 °至120°。

    Method and apparatus for physical image based inspection system
    7.
    发明授权
    Method and apparatus for physical image based inspection system 失效
    基于物理图像的检测系统的方法和装置

    公开(公告)号：US06625800B1

    公开(公告)日：2003-09-23

    申请号：US09476318

    申请日：1999-12-30

    Applicant: Qi-De Qian ,  Edita Tejnil ,  Giang Dao

    Inventor： Qi-De Qian ,  Edita Tejnil ,  Giang Dao

    IPC: G06F1750

    CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F1/36

    Abstract: A method is described that involves accepting a mask design file input and then simulating the inspection of a mask through an optical channel. The mask design file has patterns. The optical channel corresponds to a mask inspection tool optical channel. The mask is patterned according to the mask design file patterns.

    Abstract translation: 描述了一种方法，其涉及接受掩模设计文件输入，然后通过光通道模拟掩模的检查。 面具设计文件有模式。 光通道对应于掩模检查工具光通道。 掩模根据掩模设计文件图案进行图案化。

    Method, program product and apparatus for modeling resist development of a lithography process
    8.
    发明申请
    Method, program product and apparatus for modeling resist development of a lithography process 有权
    方法，程序产品和设备，用于建模光刻工艺的抗蚀剂开发

    公开(公告)号：US20080059128A1

    公开(公告)日：2008-03-06

    申请号：US11896292

    申请日：2007-08-30

    Applicant: Edita Tejnil

    Inventor： Edita Tejnil

    IPC: G06F17/10

    CPC classification number: G03F7/705

    Abstract: A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation includes a resist performance component, and the resist performance component includes a non-linear model of the resist performance.

    Abstract translation: 一种生成用于模拟光学成像系统的成像性能的模型的方法。 该方法包括以下步骤：定义光学成像系统和由光学成像系统利用的过程; 并且定义表示光学成像系统和过程的成像性能的模型方程，其中模型方程式包括抗蚀剂性能成分，并且抗蚀剂性能成分包括抗蚀剂性能的非线性模型。

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