Invention Grant
- Patent Title: Preventing junction leakage in field emission devices
- Patent Title (中): 防止场致发射装置的结漏电
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Application No.: US10400732Application Date: 2003-03-27
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Publication No.: US07098587B2Publication Date: 2006-08-29
- Inventor: James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
- Applicant: James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J63/04 ; H01J1/02 ; H01J5/50 ; G09G3/10
Abstract:
An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device are disclosed. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.
Public/Granted literature
- US20030184213A1 Method of preventing junction leakage in field emission devices Public/Granted day:2003-10-02
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