Invention Grant
- Patent Title: Electron emitting device and method of manufacturing the same
- Patent Title (中): 电子发射器件及其制造方法
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Application No.: US10453822Application Date: 2003-06-04
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Publication No.: US07375460B2Publication Date: 2008-05-20
- Inventor: Yoshiki Ishizuka , Katsuyuki Naito , Masahiko Yamamoto
- Applicant: Yoshiki Ishizuka , Katsuyuki Naito , Masahiko Yamamoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2002-164672 20020605
- Main IPC: H01J1/146
- IPC: H01J1/146 ; H01J1/304 ; H01J9/02
Abstract:
There is provided an electron emitting device, including a substrate, a pair of electrodes formed on the substrate and spaced apart from each other, a pair of electrically conductive layers formed on the electrodes, respectively, a distance between the electrically conductive layers being shorter than a distance between the electrodes, and an electron emitting layer formed between the electrically conductive layers and containing carbon and tin.
Public/Granted literature
- US20030227251A1 Electron emitting device and method of manufacturing the same Public/Granted day:2003-12-11
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