Invention Grant
- Patent Title: Charged particle beam application system
- Patent Title (中): 带电粒子束应用系统
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Application No.: US11475934Application Date: 2006-06-28
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Publication No.: US07385194B2Publication Date: 2008-06-10
- Inventor: Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
- Applicant: Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Hitachi High-Technologies Corporation,Canon Kabushiki Kaisha
- Current Assignee: Hitachi High-Technologies Corporation,Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Reed Smith LLP
- Agent Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- Priority: JP2005-187807 20050628
- Main IPC: H01J37/28
- IPC: H01J37/28 ; G01N13/10

Abstract:
An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.
Public/Granted literature
- US20070023654A1 Charged particle beam application system Public/Granted day:2007-02-01
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