A nonvolatile memory device having a self reprogramming function is provided. The nonvolatile memory device includes a memory cell, a first transistor, a second transistor, and a latch circuit. The memory cell is for data storage. The first transistor receives a reading control signal at a gate. And a first source/drain is electrically coupled to the memory cell. The second transistor receives a reset control signal at a gate. A source/drain is electrically coupled to a second source/drain of the first transistor, and a second source/drain of the second transistor is grounded. In addition, the electrical characteristics of the second transistor are opposite to that of the first transistor. The latch circuit includes a latch input terminal and a latch output terminal. In which, the latch input terminal is electrically coupled to the second source/drain of the first transistor and the first source/drain of the second transistor.